IRF9Z24N MOSFET MP3 Module and EEPROM read/write/erase
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Aug 8 - Aug 13
Live Spec
IRF9Z24N MOSFET MP3 Module and EEPROM read/write/eraseIRF9Z24N MOSFET Details: Type of Transistor: MOSFET Type of Control Channel: P Channel Pd Maximum Power Dissipation: 45 W Vds Maximum Drain Source Voltage: 55 V Vgs Maximum Gate Source Voltage: 20 V Vgs(th) Maximum Gate Threshold Voltage: 4 V Id Maximum Drain Current: 12 A Tj Maximum Junction Temperature: 175 C Qg Total Gate Charge: 19(max) nC tr Rise Time: 55 nS Coss Output Capacitance: 170 pF Rds Maximum Drain Source On State Resistance: 0. 175 Ohm
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