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IRF9Z24N MOSFET MP3 Module and EEPROM read/write/erase

SKU: 49104744298

4.3
EUR100.00 EUR139.00

Pay in 4 interest-free payments of $25.00 Learn more

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Ships within 48 hours · Estimated delivery Aug 8 - Aug 13

Live Spec

IRF9Z24N MOSFET MP3 Module and EEPROM read/write/eraseIRF9Z24N MOSFET Details: Type of Transistor: MOSFET Type of Control Channel: P Channel Pd Maximum Power Dissipation: 45 W Vds Maximum Drain Source Voltage: 55 V Vgs Maximum Gate Source Voltage: 20 V Vgs(th) Maximum Gate Threshold Voltage: 4 V Id Maximum Drain Current: 12 A Tj Maximum Junction Temperature: 175 C Qg Total Gate Charge: 19(max) nC tr Rise Time: 55 nS Coss Output Capacitance: 170 pF Rds Maximum Drain Source On State Resistance: 0. 175 Ohm

Store: jftbasic.com · Domain: jftbasic.com

Description

and EEPROM read/write/erase

CD14538BE DIP

improved multimedia

5V powered — compatible with standard USB power banks and microcontroller 5V rails

IGBT gate driving in 3-phase inverters

IRF9Z24N MOSFET MP3 Module and EEPROM read/write/eraseIRF9Z24N MOSFET Details: Type of Transistor: MOSFET Type of Control Channel: P Channel Pd Maximum Power Dissipation: 45 W Vds Maximum Drain Source Voltage: 55 V Vgs Maximum Gate Source Voltage: 20 V Vgs(th) Maximum Gate Threshold Voltage: 4 V Id Maximum Drain Current: 12 A Tj Maximum Junction Temperature: 175 C Qg Total Gate Charge: 19(max) nC tr Rise Time: 55 nS Coss Output Capacitance: 170 pF Rds Maximum Drain Source On State Resistance: 0. 175 Ohm

Exchange/Return Notes
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